Layerava Plasma ALD/ALE

Layerava Plasma Enhanced ALD

Layerava is a Hollow Cathode Plasma Enhanced Atomic Layer Deposition (HCP-ALD) system which is a versatile research tool designed for university and industrial research laboratories. Layerava is our PEALD + Thermal ALD capable platform.

Plasma introduces an alternative energy source for the ALD surface reactions in addition to thermal energy. This increases the range of available chemistries with the introduction of various neutral radicals and ion species and result in denser film deposition.

The Layerava system represents a significant advancement in plasma-assisted atomic layer deposition (ALD). Its compact chamber design, coupled with an advanced large-area high-density hollow cathode plasma source, sets it apart from the competition. The Layerava system effectively addresses the common issue of oxygen contamination from sputtered dielectric windows and eliminates the inefficiencies associated with plasma species dilution. The innovative chamber design, which is compact yet features a large plasma source, allows for direct deposition over the substrate with exceptional precision and efficiency. This design enables the generation of high-density plasma across the entire deposition area, avoiding the complications typically encountered with traditional ICP systems.

Moreover, the system includes dedicated sample entry and ellipsometer ports, enhancing its versatility for a wide range of ALD applications. With an impressive electron density of 10¹³ cm⁻³, Layerava ensures consistent, high-quality deposition across the substrate, making it an ideal choice for semiconductor and advanced material deposition.
 
Key features include:
  • Innovative Chamber Design: The compact chamber, combined with a large-area plasma source, ensures efficient and precise deposition.
  • High-Density Plasma Source: Delivers consistent plasma directly over the substrate, eliminating the disadvantages associated with plasma dilution.
  • Oxygen Contamination-Free: Utilizes a hollow cathode source to circumvent the oxygen contamination issues commonly found with traditional ICP sources.
  • Enhanced Versatility: Features dedicated sample entry and ellipsometer ports, accommodating a wide range of ALD applications.
  • Superior Electron Density: Achieves an electron density of 10¹³ cm⁻³, ensuring uniform deposition across the substrate.
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